INFLUENCE OF OXYGEN ON THE FORMATION OF EPITAXIAL ERBIUM SILICIDE FILM ON [111]SI

被引：6
作者：
GRIMALDI, MG
YAN, XS
SCERRA, G
RAVESI, S
SPINELLA, C
机构：
[1] CONSORZIO RIC MICROELECTTRON MEZZOGIORNO,CATANIA,ITALY
[2] IST METODOL & TECNOL MICROELETTRON,CATANIA,ITALY
[3] TSING HUA UNIV,DEPT MAT SCI & ENGN,BEIJING 100084,PEOPLES R CHINA
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 07期
关键词：
D O I：
10.1063/1.114963
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial ErSi2-x thin films have been grown by the reactive deposition epitaxy technique on [111]Si substrate at a pressure of similar to 10(-8) Torr in a controlled atmosphere. A close relation between the O partial pressure during deposition and the crystalline quality of the silicide film has been observed and good quality epitaxial ErSi2-x layers have been obtained if O is incorporated in the silicide layer at a concentration of similar to 7 at. %. (C) 1995 American Institute of Physics.
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页码：974 / 976
页数：3
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