ELECTRONIC PROMOTERS AND SEMICONDUCTOR OXIDATION - ALKALI-METALS ON SI(111) SURFACES

被引：96

作者：

FRANCIOSI, A ^{[1
]}

SOUKIASSIAN, P ^{[1
]}

PHILIP, P ^{[1
]}

CHANG, S ^{[1
]}

WALL, A ^{[1
]}

RAISANEN, A ^{[1
]}

TROULLIER, N ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.35.910

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：910 / 913

页数：4

共 31 条

[1] ABBATI I, 1982, J VAC SCI TECHNOL, V21, P309
[2] MEASUREMENT OF OVERLAYER-PLASMON DISPERSION IN K-CHAINS ADSORBED ON SI(001)2X1
ARUGA, T
TOCHIHARA, H
MURATA, Y
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (04) : 372 - 375
[3] OVERLAYER-INDUCED ENHANCED OXIDATION OF GAAS-SURFACES
CHANG, S
RIZZI, A
CAPRILE, C
PHILIP, P
WALL, A
FRANCIOSI, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 799 - 805
[4] CHANG SW, UNPUB PHYS REV B
[5] NOVEL ELECTRONIC-PROPERTIES OF A POTASSIUM OVERLAYER ON SI(001)-(2X1)
CIRACI, S
BATRA, IP
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (08) : 877 - 880
[6] SILICON SURFACES - METALLIC CHARACTER, OXIDATION AND ADHESION
CROS, A
[J]. JOURNAL DE PHYSIQUE, 1983, 44 (06): : 707 - 711
[7] A PHOTOEMISSION INVESTIGATION OF THE SI-AU INTERFACE AND ITS BEHAVIOR UNDER OXYGEN EXPOSURE
DERRIEN, J
RINGEISEN, F
[J]. SURFACE SCIENCE, 1983, 124 (2-3) : L35 - L40
[8] SAMARIUM CHEMISORPTION ON GROUP-IV SEMICONDUCTORS
FRANCIOSI, A
PERFETTI, P
KATNANI, AD
WEAVER, JH
MARGARITONDO, G
[J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5611 - 5616
[9] MICROSCOPIC CONTROL OF SEMICONDUCTOR SURFACE OXIDATION
FRANCIOSI, A
CHANG, S
PHILIP, P
CAPRILE, C
JOYCE, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 933 - 937
[10] LEED, AUGER AND PLASMON STUDIES OF NEGATIVE ELECTRON AFFINITY ON SI PRODUCED BY ADSORPTION OF CS AND O
GOLDSTEI.B
[J]. SURFACE SCIENCE, 1973, 35 (01) : 227 - 245