A SILICON SUSCEPTOR FOR MOCVD

被引:0
|
作者
BLAAUW, C
SPRINGTHORPE, AJ
EMMERSTORFER, B
MINER, C
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 02期
关键词
D O I
10.1116/1.573237
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:438 / 439
页数:2
相关论文
共 50 条
  • [21] The effect of susceptor inclination angle on the quality of superconducting YBCO thin films prepared by a photo-assisted MOCVD system
    Fang, Xiujun
    Li, Guoxing
    Li, Shanwen
    Zhao, Lei
    Li, Wancheng
    Zhang, Baolin
    Du, Guotong
    Chou, Penchu
    Li, Hui
    Zuo, Ran
    He, Lin
    Chen, Chinping
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2008, 468 (14): : 1053 - 1059
  • [22] INVESTIGATIONS ON THE STRUCTURE OF MOCVD ALN LAYERS ON SILICON
    RENSCH, U
    EICHHORN, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01): : 195 - 199
  • [23] MOCVD growth of GaN on porous silicon substrates
    Ishikawa, Hiroyasu
    Shimanaka, Keita
    Tokura, Fumiyuki
    Hayashi, Yasuhiko
    Hara, Yosuke
    Nakanishi, Masami
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4900 - 4903
  • [24] MOCVD OF CDS ONTO (111)SILICON SUBSTRATES
    BOONE, JL
    HOWARD, SA
    MARTIN, DD
    CANTWELL, G
    THIN SOLID FILMS, 1989, 176 (01) : 143 - 150
  • [25] Susceptor assisted microwave annealing for recrystallization and dopant activation of arsenic-implanted silicon
    Vemuri, Rajitha N. P.
    Gadre, Mandar J.
    Theodore, N. D.
    Chen, W.
    Lau, S. S.
    Alford, T. L.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (03)
  • [26] NUMERICAL SIMULATION OF THE EFFECTS OF DIFFERENT COATINGS ON GRAPHITE SUSCEPTOR FOR THE INDUCTION PROCESS OF POLYCRYSTALLINE SILICON
    Lian, K. L.
    Lian, S. S.
    Tsao, S.
    PHYSICAL AND NUMERICAL SIMULATION OF MATERIAL PROCESSING VI, PTS 1 AND 2, 2012, 704-705 : 948 - +
  • [27] MOCVD Regrowth of InP on Hybrid Silicon Substrate
    Zhang, Chong
    Liang, Di
    Bowers, John E.
    ECS SOLID STATE LETTERS, 2013, 2 (11) : Q82 - Q86
  • [28] MOCVD growth of GaN on silicon and related surfaces
    Han, J
    Fleming, JG
    Follstaedt, DM
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 53 - 58
  • [29] A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS
    VEUHOFF, E
    KUECH, TF
    MEYERSON, BS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1958 - 1961
  • [30] Fabrication of lightweight and porous silicon carbide foams as excellent microwave susceptor for heat generation
    Kumari, Saroj
    Kumar, Rajeev
    Agrawal, Pinki R.
    Prakash, Shiv
    Mondal, D. P.
    Dhakate, Sanjay R.
    MATERIALS CHEMISTRY AND PHYSICS, 2020, 253 (253)