INTRINSIC ABSORPTION-SPECTROSCOPY AND RELATED PHYSICAL QUANTITIES OF NARROW-GAP SEMICONDUCTORS HG1-XCDXTE

被引：26
|
作者：
CHU, JH
MI, ZG
TANG, DY
机构：
[1] Shanghai Institute of Technical Physics, Academia Sinica, Shanghai
来源：
INFRARED PHYSICS | 1991年 / 32卷
关键词：
D O I：
10.1016/0020-0891(91)90110-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The intrinasic optical obsorption has been measured for him film samples made from bulk Hg(1-x)Cd(x)Te with x ranging from 0.165 to 0.45 and a temperature from 4.2 to 300 K. The energy gap E(g), momentum matrix P, effective mass of heavy hole and spin-orbit splitting have been obtained from fitting calculations of absorption curves. The temperature coefficient of energy gap versus composition and the energy gap versus composition and temperature have been derived based on the experimental results. The B-M shift, the Urbach absorption tail and the intrinsic carrier concentration n(1) are also discussed in this paper.
引用
收藏
页码：195 / 211
页数：17
相关论文
共 50 条
  • [1] EMPIRICAL RULE OF INTRINSIC ABSORPTION-SPECTROSCOPY IN HG1-XCDXTE
    CHU, JH
    LI, B
    LIU, K
    TANG, DY
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) : 1234 - 1235
  • [2] BAND-TO-BAND OPTICAL-ABSORPTION IN NARROW-GAP HG1-XCDXTE SEMICONDUCTORS
    CHU, JH
    MI, ZY
    TANG, DY
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (08) : 3955 - 3961
  • [3] PHOTOREFLECTANCE IN NARROW-GAP HG1-XCDXTE AND HG1-YZNYTE
    AMIRTHARAJ, PM
    KENNEDY, JJ
    BOYD, PR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3184 - 3185
  • [4] MAGNETIC-FIELD-INDUCED LOCALIZATION IN NARROW-GAP SEMICONDUCTORS HG1-XCDXTE AND INSB
    SHAYEGAN, M
    GOLDMAN, VJ
    DREW, HD
    PHYSICAL REVIEW B, 1988, 38 (08): : 5585 - 5602
  • [5] NATURE OF LASER-EMISSION IN NARROW-GAP HG1-XCDXTE
    HERRMANN, KH
    TOMM, JW
    LINDSTAEDT, M
    INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (01) : 133 - 143
  • [6] Defect structure and diffusion of defects in narrow-gap Hg1-xCdxTe crystals
    Bogoboyashchyy, VV
    SIXTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 2003, 5065 : 208 - 218
  • [7] RESONANCE RAMAN-SCATTERING STUDY OF NARROW-GAP HG1-XCDXTE
    KSENDZOV, A
    POLLAK, FH
    AMIRTHARAJ, PM
    WILSON, JA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 : S78 - S80
  • [8] Empirical rule of intrinsic absorption spectroscopy in Hg1-xCdxTe
    1600, (75):
  • [9] RECOMBINATION EFFECTS IN NARROW-GAP SEMICONDUCTORS P-HG1-XCDXTE
    VOITSEKHOVSKII, AV
    LILENKO, YV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02): : 381 - 386
  • [10] WEAK LOCALIZATION IN THE NARROW GAP BULK SEMICONDUCTORS HG1-XCDXTE AND INSB
    MANI, RG
    GHENIM, L
    CHOI, JB
    SOLID STATE COMMUNICATIONS, 1991, 79 (08) : 693 - 697
12345