1/F NOISE IN OHMIC SILICON-JFET CHANNELS

被引：5
作者：
BHATTI, GS
JONES, BK
机构：
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1984年 / 17卷 / 12期
关键词：
D O I：
10.1088/0022-3727/17/12/009
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2407 / 2422
页数：16
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