1/F NOISE IN OHMIC SILICON-JFET CHANNELS

被引：5

作者：

BHATTI, GS

JONES, BK

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1984年 / 17卷 / 12期

关键词：

D O I：

10.1088/0022-3727/17/12/009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2407 / 2422

页数：16

共 18 条

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[2]

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[5]

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[9] DIRECT CORRELATION BETWEEN 1-F AND OTHER NOISE SOURCES [J].

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[10] TEMPERATURE-DEPENDENCE OF LOW-FREQUENCY ELECTRICAL NOISE IN SILICON RESISTORS [J].

JONES, BK .

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