DEVELOPMENT OF POSITIVE PHOTORESISTS

被引：177

作者：

MACK, CA

机构：

[1] US Dep of Defense, Fort Meade, MD,, USA, US Dep of Defense, Fort Meade, MD, USA

来源：

关键词：

D O I：

10.1149/1.2100396

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：148 / 152

页数：5

共 11 条

[1]

ARCUS RA, 1986, P SPIE, V631

[2] A SIMPLE-MODEL FOR PREDICTING CONTRAST IN PHOTORESISTS [J].

BABU, SV ;

SRINIVASAN, V .

[3] THERMAL EFFECTS ON PHOTORESIST AZ1350J [J].

DILL, FH ;

SHAW, JM .

[4] CHARACTERIZATION OF POSITIVE PHOTORESIST [J].

DILL, FH ;

HORNBERGER, WP ;

HAUGE, PS ;

SHAW, JM .

[5]

HINSBERG WD, 1984, P SOC PHOTO-OPT INST, V469, P57, DOI 10.1117/12.941777

[6]

JOHNSON DW, 1984, P SOC PHOTO-OPT INST, V469, P72, DOI 10.1117/12.941779

[7]

KIM DJ, 1984, IEEE T ELECTRON DEV, V31, P1730

[8]

Mack C.A., 1985, KODAK MICROELECTRONI, P155

[9]

MACK CA, 1985, P SOC PHOTO-OPT INST, V538, P207

[10]

NARAIMHAM MA, 1977, P SOC PHOTO-OPT INS, V100, P57