ELECTRICAL-PROPERTIES OF SI HEAVILY IMPLANTED WITH BORON MOLECULAR-IONS

被引：22
作者：
FUSE, G [1 ]
HIRAO, T [1 ]
INOUE, K [1 ]
TAKAYANAGI, S [1 ]
YAEGASHI, Y [1 ]
机构：
[1] MATSUSHITA ELECTR CORP,KYOTO,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 05期
关键词：
D O I：
10.1063/1.331148
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3650 / 3653
页数：4
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