INVESTIGATIONS INTO THE GROWTH OF ALN BY MOCVD USING TRIMETHYLSILYLAZIDE AS NITROGEN-SOURCE

被引：12

作者：

AULD, J ^{[1
]}

HOULTON, DJ ^{[1
]}

JONES, AC ^{[1
]}

RUSHWORTH, SA ^{[1
]}

CRITCHLOW, GW ^{[1
]}

机构：

[1] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1994年 / 4卷 / 08期

关键词：

D O I：

10.1039/jm9940401245

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of AlN have been deposited by atmospheric-pressure MOCVD using trimethylaluminium (Me3Al) and trimethylsilylazide (Me3SiN3) as precursors. The films were deposited at 300 or 450-degrees-C and had growth rates of up to 3 mum h-1

引用

页码：1245 / 1247

页数：3

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