OBSERVATIONS OF NEW MISFIT DISLOCATION CONFIGURATIONS AND SLIP SYSTEMS AT ULTRAHIGH STRESSES IN THE (AL)GAAS/INXGA1-XAS/GAAS(100) SYSTEM

被引：39

作者：

BONAR, JM ^{[1
]}

HULL, R ^{[1
]}

WALKER, JF ^{[1
]}

MALIK, R ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期

关键词：

D O I：

10.1063/1.107332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed new misfit dislocation configurations and slip systems in (Al)GaAs/InxGa1-xAs/GaAs(100) heterostructures for x greater-than-or-equal-to 0.4. Dislocations are observed running along [001] directions in the interface, which are inconsistent with conventional glide of misfit dislocations on {111} planes in the zincblende lattice. Diffraction contrast analysis in a transmission electron microscope (TEM) shows that these dislocations are of the edge type with b = a/2[011], inclined at 45-degrees to the interface. In situ TEM heating experiments reveal dislocation propagation velocities approximately tens of mu-m s-1 at 600-degrees-C, suggesting that they are moving by glide, rather than climb. The only slip planes consistent with these observations are {110} planes inclined to the interface. This represents a new relaxation mechanism in highly strained semiconductor heterostructures.

引用

页码：1327 / 1329

页数：3

共 7 条

[1]

BONAR JM, 1990, P MATER RES SOC, V160, P117

[2]

HIRTH JP, 1968, THEORY DISLOCATIONS, pCH8

[3] INTERPRETATION OF DISLOCATION PROPAGATION VELOCITIES IN STRAINED GEXSI1-X/SI(100) HETEROSTRUCTURES BY THE DIFFUSIVE KINK PAIR MODEL [J].