LASING CHARACTERISTICS OF INGAAS/INGAASP MQW STRUCTURES GROWN BY LOW-PRESSURE MOVPE

被引：4
|
作者：
ROSENZWEIG, M
EBERT, W
FRANKE, D
GROTE, N
SARTORIUS, B
WOLFRAM, P
机构：
[1] Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GnbH, D-1000 Berlin 10
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90561-I
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InGaAs/InGaAsP MQW SC lasers for 1.55-mu-m emission wavelength with different numbers of quantum wells have been fabricated using low-pressure MOVPE. Photoluminescence and gain spectra and threshold current densities and the temperature behaviour T0 of broad area lasers at varying cavity lengths have been investigated.
引用
收藏
页码：802 / 805
页数：4
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