A NEW VERTICAL DOUBLE DIFFUSED MOSFET - THE SELF-ALIGNED TERRACED-GATE MOSFET

被引：22

作者：

UEDA, D

TAKAGI, H

KANO, G

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1984.21543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：416 / 420

页数：5

共 19 条

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