PHOTOENHANCED DISSOLUTION AND DIFFUSION OF AG IN AS-S LAYERS

被引:39
作者
WAGNER, T
FRUMAR, M
机构
[1] Department of General and Inorganic Chemistry, University of Chemical Technology
关键词
D O I
10.1016/0022-3093(90)90701-M
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The photoenhanced dissolution and diffusion (PD) of Ag in AsS layers was studied. The time dependence of PD rate is of sigmoid type and is influenced by the intensity of illumination, wavelength of actinic light and by the composition of layers. The induction period is shortened when Ag2S or an Ag-doped interlayer is placed between silver and the undoped AsS layer. It is proposed that during the induction period a new photodoped amorphous phase II with high Ag content is formed. Sharp diffusion profile of Ag is caused by the existence of an immiscibility gap of Ag in the AsS system. The rate of PD in the linear part of the sigmoid curve is controlled by a diffusion field (Nernst potential) created by different mobilities of Ag+ ions and holes (electrons). The diffusion of mobile Ag+ is controlled by diffusion of low mobility holes (electrons). The illumination increases their density, decreases the diffusion potential and speeds up the diffusion rate of Ag+ ions. © 1990.
引用
收藏
页码:269 / 276
页数:8
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