NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR STUDY OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS

被引：79
作者：
SCHWUTTK.GH
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 09期
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D O I：
10.1063/1.1714567
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：2712 / &
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