NOISE OF A SELF-SUSTAINING AVALANCHE DISCHARGE IN SILICON - LOW-FREQUENCY NOISE STUDIES

被引：33

作者：

HAITZ, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1967年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.1710027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2935 / +

页数：1

相关论文

共 27 条

[1] AVALANCHE TRANSIT-TIME MICROWAVE OSCILLATORS AND AMPLIFIERS
DELOACH, BC
JOHNSTON, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 181 - &
[2] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS
GOETZBERGER, A
SCARLETT, RM
HAITZ, RH
MCDONALD, B
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +
[3] CONTROLLED NOISE GENERATION WITH AVALANCHE DIODES .2. HIGH PULSE RATE DESIGN
HAITZ, RH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (03) : 342 - &
[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS
HAITZ, RH
GOETZBERGER, A
SCARLETT, RM
SHOCKLEY, W
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1581 - &
[5] NOISE STUDIES IN UNIFORM AVALANCHE DIODES
HAITZ, RH
VOLTMER, FW
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (10) : 381 - &
[6] NOISE ANALYSIS FOR A SILICON PARTICLE DETECTOR WITH INTERNAL MULTIPLICATION
HAITZ, RH
SMITS, FM
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (03) : 198 - +
[7] NOISE IN AVALANCHE DIODES
HAITZ, RH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (8-9) : 671 - &
[8] AVALANCHE NOISE STUDY IN MICROPLASMAS AND UNIFORM JUNCTIONS
HAITZ, RH
GOETZBERGER, A
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (06) : 678 - &
[9] MODEL FOR ELECTRICAL BEHAVIOR OF MICROPLASMA
HAITZ, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1370 - &
[10] MECHANISMS CONTRIBUTING TO NOISE PULSE RATE OF AVALANCHE DIODES
HAITZ, RH
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3123 - &