CHARACTERISTICS OF DISTRIBUTION OF DENSITY OF STATES IN HEAVILY DOPED P-TYPE GAAS

被引：0

作者：

ABDURAKHMANOV, KP ^{[1
]}

MIRAKHMEDOV, S ^{[1
]}

TESHABAEV, A ^{[1
]}

KHUDAIBERDIEV, SS ^{[1
]}

机构：

[1] VI LENIN STATE UNIV, TASHKENT, UZBEKISTAN

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：393 / 397

页数：5

共 18 条

[1]

Abdurakhmanov K. P., 1973, Soviet Physics - Solid State, V14, P2234

[2]

ABDURAKHMANOV KP, 1971, PRIB TEKH EKSP, P127

[3]

BONCHBRUEVICH VL, 1965, SOLID STATE PHYSICS

[4] TUNNELING SPECTROSCOPY IN GAAS [J].

CONLEY, JW ;

MAHAN, GD .

PHYSICAL REVIEW, 1967, 161 (03) :681-+

[5] ELECTRON TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

DUKE, CB ;

MAHAN, GD ;

TIEMANN, JJ .

PHYSICAL REVIEW, 1966, 150 (02) :466-&

[6] EXPERIMENTAL ASPECTS OF TUNNELING IN METAL-SEMICONDUCTOR BARRIERS [J].

CONLEY, JW ;

TIEMANN, JJ .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2880-&

[7]

DUKE CB, 1969, SOLID STATE PHYS S10

[8] OPTICAL ABSORPTION OF GALLIUM ARSENIDE IN RESTSTRAHLEN BAND [J].

FRAY, SJ ;

WILLIAMS, N ;

JOHNSON, FA ;

QUARRINGTON, JE .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 77 (493) :215-&

[9] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J].

HALPERIN, BI ;

LAX, M .

PHYSICAL REVIEW, 1966, 148 (02) :722-+

[10] CALCULATION OF FERMI ENERGY AND BANDTAIL PARAMETERS IN HEAVILY DOPED DEGENERATE NORMAL-TYPE GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2668-+

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