ON THE TEMPERATURE-COEFFICIENT OF THE MOSFET THRESHOLD VOLTAGE

[1] COBBOLD RSC, THEORY APPLICATIONS

[2] COMPENSATED MOSFET DEVICES [J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 359 - 373

[3] MODELING OF SCALED-DOWN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 237 - 242

[4] RIDEOUT VL, 1975, IBM J RES DEV, P50

[5] THRESHOLD-VOLTAGE TEMPERATURE DRIFT IN ION-IMPLANTED MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 661 - 668

[6] SZE SM, PHYSICS SEMICONDUCTO, P452

[7] THE TEMPERATURE-DEPENDENCE OF THRESHOLD VOLTAGES IN SUBMICROMETER CMOS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 250 - 252

[1] COBBOLD RSC, THEORY APPLICATIONS

[2] COMPENSATED MOSFET DEVICES [J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 359 - 373

[3] MODELING OF SCALED-DOWN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (03) : 237 - 242

[4] RIDEOUT VL, 1975, IBM J RES DEV, P50

[5] THRESHOLD-VOLTAGE TEMPERATURE DRIFT IN ION-IMPLANTED MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 661 - 668

[6] SZE SM, PHYSICS SEMICONDUCTO, P452

[7] THE TEMPERATURE-DEPENDENCE OF THRESHOLD VOLTAGES IN SUBMICROMETER CMOS [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 250 - 252