Metalorganic chemical vapor deposition of AlGaAs using tertiarybutylarsine

被引：0
|
作者：
Ishikawa, H
Izumiya, T
Mashita, M
机构：
[1] Research and Development Center, Toshiba Corporation, Kawasaki, 210, 1, Komukai Toshiba-cho, Saiwai-ku
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12A期
关键词：
organoarsenic compounds; tertiarybuthylarsine; MOCVD; carbon incorporation; AlGaAs;
D O I：
10.1143/JJAP.34.6377
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The amounts of intrinsic carbon incorporation in AlGaAs epilayers grown by metalorganic chemical vapor deposition (MOCVD) were compared between ones grown using AsH3 and ones grown using tertiarybuthylarsine (TBAs). The hole concentration of the epilayers grown using TBAs was much lower than that of the epilayers grown using AsH3. It has been suggested that As-2 and/or As-4 molecules have the ability to remove methyl groups originating from group-III source materials.
引用
收藏
页码：6377 / 6378
页数：2
相关论文
共 50 条
  • [31] Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateral overgrowth by metalorganic chemical vapor deposition
    Kazi, Zaman Iqbal
    Thilakan, Periyasamy
    Egawa, Takashi
    Umeno, Masayoshi
    Jimbo, Takashi
    1600, Japan Society of Applied Physics (40):
  • [32] VARIATION OF AL COMPOSITION OF ALGAAS DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4
    LEE, JS
    KIM, I
    CHOE, BD
    JEONG, WG
    LIM, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1995, 28 : S195 - S199
  • [33] Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateral overgrowth by metalorganic chemical vapor deposition
    Kazi, ZI
    Thilakan, P
    Egawa, T
    Umeno, M
    Jimbo, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (08): : 4903 - 4906
  • [34] HEAVILY SI-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND SILANE
    CHICHIBU, S
    IWAI, A
    MATSUMOTO, S
    HIGUCHI, H
    APPLIED PHYSICS LETTERS, 1992, 60 (04) : 489 - 491
  • [35] RAPID THERMAL LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF IN0.53GA0.47AS FILMS USING TERTIARYBUTYLARSINE
    KATZ, A
    FEINGOLD, A
    MORIYA, N
    PEARTON, SJ
    GEVA, M
    BAIOCCHI, FA
    LUTHER, LC
    LANE, E
    APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2679 - 2681
  • [36] Carbon doping in AlGaAs using trimethylarsine by metalorganic chemical vapor deposition with a high-speed rotating susceptor
    Watanabe, Noriyuki
    Ito, Hiroshi
    Ishibashi, Tadao
    Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (4 B):
  • [37] GROWTH OF HIGH-QUALITY 1.93-EV ALGAAS USING METALORGANIC CHEMICAL VAPOR-DEPOSITION
    LEWIS, CR
    HAMAKER, HC
    GREEN, RT
    JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (05) : 365 - 371
  • [38] METALORGANIC CHEMICAL VAPOR-DEPOSITION
    DAPKUS, PD
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 243 - 269
  • [39] METALORGANIC CHEMICAL VAPOR-DEPOSITION
    MILLER, LM
    COLEMAN, JJ
    CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01): : 1 - 26
  • [40] Growth of GaInNAs by metalorganic chemical vapor deposition using dimethylhydrazine
    Sato, S
    Satoh, S
    PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 1998, 98 (02): : 188 - 195
12345