Metalorganic chemical vapor deposition of AlGaAs using tertiarybutylarsine

被引：0

作者：

Ishikawa, H

Izumiya, T

Mashita, M

机构：

[1] Research and Development Center, Toshiba Corporation, Kawasaki, 210, 1, Komukai Toshiba-cho, Saiwai-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 12A期

关键词：

organoarsenic compounds; tertiarybuthylarsine; MOCVD; carbon incorporation; AlGaAs;

D O I：

10.1143/JJAP.34.6377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The amounts of intrinsic carbon incorporation in AlGaAs epilayers grown by metalorganic chemical vapor deposition (MOCVD) were compared between ones grown using AsH3 and ones grown using tertiarybuthylarsine (TBAs). The hole concentration of the epilayers grown using TBAs was much lower than that of the epilayers grown using AsH3. It has been suggested that As-2 and/or As-4 molecules have the ability to remove methyl groups originating from group-III source materials.

引用

页码：6377 / 6378

页数：2

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