BAND-STRUCTURE AND HIGH-PRESSURE PHASE-TRANSITION IN GAN, ALN, INN AND BN

被引：27

作者：

GORCZYCA, I ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

机构：

[1] UNIPRESS,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND

来源：

PHYSICA B | 1993年 / 185卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(93)90270-G

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The linear muffin-tin orbital method is used to calculate the band structure and to investigate the structural properties of III-V nitrides under high pressure. The obtained pressure coefficients of energy gaps, dielectric constants, bulk moduli and phase transition pressures are compared with existing theoretical and experimental data.

引用

页码：410 / 414

页数：5

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