CDIN2S2SE2 - A NEW SEMICONDUCTING COMPOUND

被引：5
|
作者：
PARACCHINI, C
PARISINI, A
TARRICONE, L
机构：
来源：
JOURNAL OF SOLID STATE CHEMISTRY | 1986年 / 65卷 / 01期
关键词：
D O I：
10.1016/0022-4596(86)90087-3
中图分类号：
O61 [无机化学];
学科分类号：
070301 ; 081704 ;
摘要：
引用
收藏
页码：40 / 44
页数：5
相关论文
共 50 条
  • [31] PREPARATION AND PHOTO-VOLTAIC PROPERTY OF HETEROJUNCTION - HGCR2SE4-CDIN2S4
    MASUMOTO, K
    KOGUCHI, N
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1978, 42 (01) : 25 - 32
  • [32] Theoretical study of the ordered-vacancy semiconducting compound CdAl2Se4
    Fuentes-Cabrera, M
    Sankey, OF
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (08) : 1669 - 1684
  • [33] Magnetic and Mossbauer study of the novel FeIn2S2Se2 layered compound
    Goya, GF
    Memo, A
    Haeuseler, H
    JOURNAL OF SOLID STATE CHEMISTRY, 2002, 164 (02) : 326 - 331
  • [34] New chemical method of preparing semiconducting MoX2 (X = S, Se) thin films
    Mandai, Krishna Chandra, 1600, (30):
  • [35] Ultrathin Semiconducting Bi2Te2S and Bi2Te2Se with High Electron Mobilities
    Wang, Bing
    Niu, Xianghong
    Ouyang, Yixin
    Zhou, Qionghua
    Wang, Jinlan
    JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2018, 9 (03): : 487 - 490
  • [36] SEMICONDUCTING PROPERTIES AND DOPING OF SC2S3 AND SC2SE3
    DISMUKES, JP
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (07) : 1689 - &
  • [37] THE PHOTOELECTROCHEMISTRY OF CDIN2S4
    EPPS, GF
    BECKER, RS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2628 - 2633
  • [38] New Structural Investigations in the Cu2Se(S)-In2Se(S)3/ Cu2Se(S)-Ga2Se(S)3 Phase Diagram
    Stephan, C.
    Schorr, S.
    Schock, H-W
    THIN-FILM COMPOUND SEMICONDUCTOR VOLTAICS-2009, 2010, 1165 : 411 - +
  • [39] PHASE-EQUILIBRIA AND COMPOUND PROPERTIES IN TL2S(SE)-SNS2(SE2) SYSTEMS
    LAZAREV, VB
    PERESH, EY
    STAROSTA, VI
    MUDRYI, VV
    ZHURNAL NEORGANICHESKOI KHIMII, 1985, 30 (06): : 1502 - 1506
  • [40] ENERGY-SPECTRUM OF BETA-CDIN2SE4
    KERIMOVA, TG
    MEKHTIEV, NM
    ADZHALOVA, FR
    GUSEINOV, ZZ
    SALAEV, EY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (07): : 740 - 742
12345