共 50 条
- [1] DEEP LEVELS IN GAAS1-XPX SOLID-SOLUTIONS WITH SHALLOW DONORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1829 - 1830
- [2] DEEP DONOR LEVEL IN THE GAAS1-XPX SOLID-SOLUTION PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (14): : 847 - 848
- [3] THERMAL CONDUCTIVITY OF GAAS1-XPX SOLID-SOLUTIONS FIZIKA TVERDOGO TELA, 1972, 14 (09): : 2755 - &
- [4] DISORDER SCATTERING IN GAAS1-XPX SOLID-SOLUTIONS PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 41 (02): : 687 - 691
- [5] THERMOELECTRIC FIGURE OF MERIT OF GAAS1-XPX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1216 - 1217
- [6] CHARACTERISTIC FEATURES OF RADIATION DEFECTS IN GAAS1-XPX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 949 - 950
- [7] THERMOELECTRIC-POWER AND EFFECTIVE MASS OF ELECTRONS IN GAAS1-XPX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 117 - 118
- [8] SCATTERING OF ELECTRONS IN GAAS1-XPX SOLID SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (02): : 324 - &
- [9] COMPUTATION OF NONSTOICHIOMETRY OF GA1-XALXAS AND GAAS1-XPX TRIPLE SOLID-SOLUTIONS ZHURNAL FIZICHESKOI KHIMII, 1991, 65 (01): : 281 - 283
- [10] CALCULATION OF NONSTOICHIOMETRY OF TERNARY SOLID-SOLUTIONS OF GA1-XALXAS AND GAAS1-XPX KRISTALLOGRAFIYA, 1991, 36 (01): : 142 - 146