TRANSIENT PHOTOCONDUCTIVE RESPONSE OF INP-FE

被引：14

作者：

IVERSON, AE ^{[1
]}

SMITH, DL ^{[1
]}

PAULTER, NG ^{[1
]}

HAMMOND, RB ^{[1
]}

机构：

[1] UNIV ARIZONA,PROGRAM APPL MATH,TUCSON,AZ 85721

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：234 / 239

页数：6

共 12 条

[1] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

AUSTON, DH ;

JOHNSON, AM ;

SMITH, PR ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1980, 37 (04) :371-373

[2] DEEP LEVEL SPECTROSCOPY IN INP-FE [J].

BREMOND, G ;

NOUAILHAT, A ;

GUILLOT, G ;

COCKAYNE, B .

ELECTRONICS LETTERS, 1981, 17 (01) :55-56

[3]

Debney B. T., 1980, Semi-Insulating III-V Materials, P305

[4] PICOSECOND PHOTORESPONSE IN HE-3(+) BOMBARDED INP PHOTOCONDUCTORS [J].

DOWNEY, PM ;

SCHWARTZ, B .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :207-209

[5] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J].

FUNG, S ;

NICHOLAS, RJ ;

STRADLING, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23) :5145-5155

[6] OBSERVED CIRCUIT LIMITS TO TIME RESOLUTION IN CORRELATION-MEASUREMENTS WITH SI-ON-SAPPHIRE, GAAS, AND INP PICOSECOND PHOTOCONDUCTORS [J].

HAMMOND, RB ;

PAULTER, NG ;

WAGNER, RS .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :289-291

[7] EXCITATION AND FE CONCENTRATION DEPENDENCES IN THE IMPULSE PHOTOCONDUCTANCE OF INP-FE [J].

HAMMOND, RB ;

PAULTER, NG ;

WAGNER, RS ;

SPRINGER, TE .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :620-622

[8] PULSED SOFT-X-RAY RESPONSE OF INP-FE PHOTOCONDUCTORS [J].

KANIA, DR ;

BARTLETT, RJ ;

WAGNER, RS ;

HAMMOND, RB ;

PIANETTA, P .

APPLIED PHYSICS LETTERS, 1984, 44 (11) :1059-1061

[9] 80-MW PHOTOCONDUCTOR POWER SWITCH [J].

NUNNALLY, WC ;

HAMMOND, RB .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :980-982

[10]

RITTNER ES, 1957, PHOTOCONDUCTIVITY C, P215

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