LASER STUDIES OF THE REACTIVITY OF NH(X3-SIGMA-) WITH THE SURFACE OF SILICON-NITRIDE

被引：33

作者：

FISHER, ER ^{[1
]}

HO, P ^{[1
]}

BREILAND, WG ^{[1
]}

BUSS, RJ ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1992年 / 96卷 / 24期

关键词：

D O I：

10.1021/j100203a051

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reactivity of NH(X3SIGMA-)) with the surface of both a silicon nitride film and a depositing hydrogenated silicon nitride film has been measured to be essentially zero with an upper limit of 0. 1 for substrate temperatures of 300-700 K. The reactivity was directly determined using spatially resolved laser-induced fluorescence of NH in a plasma-generated molecular beam incident on the surface. The NH adsorbs and then desorbs from the surface with a spatial distribution consistent with a cosine angular distribution. No dependence of reactivity on rotational state of the NH was observed.

引用

页码：9855 / 9861

页数：7

共 32 条

[1] COLLISION-INDUCED INTERSYSTEM CROSSING IN NH(A1-DELTA)-]NH(X3-SIGMA-) [J].