SCHOTTKY-BARRIER HEIGHT VARIATIONS ON THE POLAR (111) FACES OF N-GAP

被引:4
作者
SCHWARTZ, GP
GUALTIERI, GJ
机构
关键词
D O I
10.1063/1.336231
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4621 / 4625
页数:5
相关论文
共 50 条
[21]   Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices [J].
Demir, K. Cinar ;
Coskun, C. ;
Kurudirek, S. V. ;
Oz, S. ;
Aydogan, S. ;
Biber, M. .
INTERNATIONAL PHYSICS CONFERENCE AT THE ANATOLIAN PEAK (IPCAP2016), 2016, 707
[22]   SCHOTTKY-BARRIER HEIGHT ENHANCEMENT IN N-INP FOR MESFET APPLICATIONS [J].
ILIADIS, AA .
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, :413-416
[23]   SCHOTTKY-BARRIER HEIGHT ENHANCEMENT IN N-INP FOR MESFET APPLICATIONS [J].
ILIADIS, AA .
INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96) :413-416
[24]   Spatially resolved internal and external photoemission of Pt/n-GaP Schottky barrier [J].
Coluzza, C ;
Almeida, J ;
dellOrto, T ;
Barbo, F ;
Bertolo, M ;
Bianco, A ;
Cerasari, S ;
Fontana, S ;
Bergossi, O ;
Spajer, M ;
Courjon, D .
APPLIED SURFACE SCIENCE, 1996, 104 :196-203
[25]   SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON N-IN0.53GA0.47AS [J].
KORDOS, P ;
MARSO, M ;
MEYER, R ;
LUTH, H .
JOURNAL OF APPLIED PHYSICS, 1992, 72 (06) :2347-2355
[26]   SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].
KAJIYAMA, K ;
MIZUSHIMA, Y ;
SAKATA, S .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459
[27]   INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON THE SCHOTTKY-BARRIER HEIGHT OF SI(111)-PB [J].
HOWES, PB ;
EDWARDS, KA ;
HUGHES, DJ ;
MACDONALD, JE ;
HIBMA, T ;
BOOTSMA, T ;
JAMES, MA .
PHYSICAL REVIEW B, 1995, 51 (24) :17740-17743
[28]   NEW METHOD FOR CONTROL OF SCHOTTKY-BARRIER HEIGHT [J].
BRUCKER, CF ;
BRILLSON, LJ .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :67-69
[29]   AU/INSE SCHOTTKY-BARRIER HEIGHT DETERMINATION [J].
MAMY, R ;
ZAOUI, X ;
BARRAU, J ;
CHEVY, A .
REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09) :947-950
[30]   THE SCHOTTKY-BARRIER HEIGHT OF PLATINUM NICKEL SILICIDE [J].
ELLWANGER, RC ;
MORGAN, AE ;
STACY, WT ;
TAMMINGA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :533-539