THE PROPERTIES OF SI IN MBE GROWN ALXGA1-XAS

被引：0

作者：

FISCHER, R

HOPKINS, CG

EVANS, CA

DRUMMOND, TJ

LYONS, WG

KLEM, J

COLVARD, C

MORKOC, H

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] CHARLES EVANS & ASSOC,SAN MATEO,CA 94402

[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1983年 / 65期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：157 / 164

页数：8

相关论文

共 15 条

[1] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343
[2] AN ANOMALY IN THE RELATION OF HALL-COEFFICIENT TO RESISTIVITY IN N-TYPE ALXGA1-XAS
AYABE, M
MORI, Y
WATANABE, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : L55 - L58
[3] CASEY HC, 1978, HETEROSTRUCTURE LA A, pCH4
[4] THE EFFECT OF GROWTH-CONDITIONS ON SI INCORPORATION IN MOLECULAR-BEAM EPITAXIAL GAAS
CHAI, YG
WOOD, CEC
CHOW, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 800 - 803
[5] INFRARED-ABSORPTION AND MICROSTRUCTURE OF LI-SATURATED SI-DOPED GAAS
CHEN, RT
SPITZER, WG
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1607 - 1617
[6] COLLINS DM, 1982, J APPL PHYS
[7] INFLUENCE OF ALAS MOLE FRACTION ON THE ELECTRON-MOBILITY OF (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
FISCHER, R
MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1028 - 1029
[8] HALL-EFFECT AND MOBILITY IN HETEROJUNCTION LAYERS
KEEVER, M
DRUMMOND, TJ
MORKOC, H
HESS, K
STREETMAN, BG
LUDOWISE, M
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1034 - 1036
[9] ELECTRON-TRANSPORT AND BAND-STRUCTURE OF GA1-XALXAS ALLOYS
LEE, HJ
JURAVEL, LY
WOOLLEY, JC
SPRINGTHORPE, AJ
[J]. PHYSICAL REVIEW B, 1980, 21 (02) : 659 - 669
[10] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY
MORKOC, H
DRUMMOND, TJ
FISCHER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1030 - 1033