MULTILEVEL MONOLITHIC INDUCTORS IN SILICON TECHNOLOGY

被引：50
|
作者：
SOYUER, M
BURGHARTZ, JN
JENKINS, KA
PONNAPALLI, S
EWEN, JF
PENCE, WE
机构：
[1] IBM T.J. Watson Research Center, NY 10598, PO Box 218, M/S 23-245, Yorktown Heights
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 05期
关键词：
BICMOS INTEGRATED CIRCUITS; INDUCTORS; MMIC;
D O I：
10.1049/el:19950241
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Multilevel monolithic inductors implemented in a standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4GHz and above 6 at 900MHz for a 2nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps.
引用
收藏
页码：359 / 360
页数：2
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