THIN-FILM AL DIAMOND SCHOTTKY DIODE OVER 400-V BREAKDOWN VOLTAGE

被引：24

作者：

JENG, DG ^{[1
]}

TUAN, HS ^{[1
]}

SALAT, RF ^{[1
]}

FRICANO, GJ ^{[1
]}

机构：

[1] VACTRON LAB EQUIPMENT INC,BOHEMIA,NY 11716

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond Schottky diodes were developed by growing diamond film (DF) on n-type silicon followed by evaporating aluminum (Al) contacts on the top of the DF. A high breakdown voltage (over 400 V) and a high forward-to-reverse current ratio (IF/IR over 105) have been observed. In spite of the high internal resistance, an ideality factor of 1.85 was determined.

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页码：5902 / 5904

页数：3

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