DETERMINATION OF MINORITY-CARRIER GENERATION LIFETIME IN BEAM-RECRYSTALLIZED SILICON-ON-INSULATOR STRUCTURE BY USING A DEPLETION-MODE TRANSISTOR

被引：20
作者：
VU, DP
PFISTER, JC
机构：
来源：
APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期
关键词：
D O I：
10.1063/1.95939
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：950 / 952
页数：3
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