IMPROVEMENT OF GRAIN-SIZE AND DEPOSITION RATE OF MICROCRYSTALLINE SILICON BY USE OF VERY HIGH-FREQUENCY GLOW-DISCHARGE

被引：127

作者：

FINGER, F ^{[1
]}

HAPKE, P ^{[1
]}

LUYSBERG, M ^{[1
]}

CARIUS, R ^{[1
]}

WAGNER, H ^{[1
]}

SCHEIB, M ^{[1
]}

机构：

[1] UNIV KAISERLAUTERN,INST OBERFLACHEN & SCHICHTANALYT GMBH,D-67663 KAISERSLAUTERN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 20期

关键词：

D O I：

10.1063/1.112604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the plasma excitation frequency on the growth conditions and the material properties of microcrystalline silicon prepared by plasma enhanced chemical vapor deposition at low deposition temperature is investigated. It is found that an increase of the plasma excitation frequency leads to a simultaneous increase of the growth rate, the grain size, and the Hall mobility of microcrystalline silicon. This is attributed to an effective selective etching of disordered material creating more space to develop crystalline grains, while also more species for faster growth of the crystallites are available. © 1994 American Institute of Physics.

引用

页码：2588 / 2590

页数：3

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