SPUTTERING EFFECTS IN SI, SIO2 AND THE SI/SIO2 INTERFACE

被引：8
|
作者：
DOWNEY, SW
EMERSON, AB
机构：
[1] AT&T Bell Laboratories, Murray Hill, New Jersey, 07974
来源：
SURFACE AND INTERFACE ANALYSIS | 1993年 / 20卷 / 01期
关键词：
D O I：
10.1002/sia.740200109
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Resonance ionization mass spectrometry (RIMS) is used to determine the optimal sputtering conditions for sampling Si and SiO2 in depth profiling applications. Silicon RIMS signals are proportional to the Si concentration in these materials. Molecular formation during sputtering is significant with Xe+ at low energy (less-than-or-equal-to 4 keV) and a high angle of incidence (approximately 60-degrees from normal). Sputtering with Ar+ suppresses molecular formation. Because matrix effects are minimized with RIMS, pecularities in profiles at interfaces are easy to observe. The RIMS profiles of Ni and Co implants into SiO2 on Si show evidence of enhanced metal-silicon bonding at the oxide/substrate interface.
引用
收藏
页码：53 / 59
页数：7
相关论文
共 50 条
  • [41] Atomic structure of SiO2 at SiO2/Si interfaces
    Hirose, K
    Nohira, H
    Sakano, K
    Hattori, T
    APPLIED SURFACE SCIENCE, 2000, 166 (1-4) : 455 - 459
  • [42] Analyses of the As doping of SiO2/Si/SiO2 nanostructures
    Ruffino, Francesco
    Tomasello, Mario Vincenzo
    Miritello, Maria
    De Bastiani, Riccardo
    Nicotra, Giuseppe
    Spinella, Corrado
    Grimaldi, Maria Grazia
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 863 - 866
  • [43] Photoluminescence of Si/SiO2 and SiNx/SiO2 multilayers
    Institute of Solid State Physics, School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China
    不详
    Bandaoti Guangdian, 2007, 5 (680-684):
  • [44] Si implantation in SiO2:: Stucture of Si nanocrystals and composition of SiO2 layer
    Levitcharsky, V.
    Saint-Jacques, R. G.
    Wang, Y. Q.
    Nikolova, L.
    Smirani, R.
    Ross, G. G.
    SURFACE & COATINGS TECHNOLOGY, 2007, 201 (19-20) : 8547 - 8551
  • [45] Nitrogen diffusion and accumulation at the Si/SiO2 interface in SiO2/Si3N4/SiO2 structures for nonvolatile semiconductor memories
    Saraf, M
    Edrei, R
    Shima-Edelstein, R
    Roizin, Y
    Hoffman, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04): : 1558 - 1561
  • [46] Photoluminescence from SiO2/Si/SiO2 structures
    Photopoulos, P
    Nassiopoulou, AG
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (21) : 3641 - 3650
  • [47] RuO2/SiO2/Si and SiO2/porous Si/Si interfaces analysed by SIMS
    Cwil, Michal
    Konarski, Piotr
    Pajak, Michal
    Bieniek, Tomasz
    Kosinski, Andrzej
    Kaczorek, Krzysztof
    APPLIED SURFACE SCIENCE, 2006, 252 (19) : 7058 - 7061
  • [48] Preferential growth of Si nanocrystals in SiO2/Si/SiO2 sandwich structure
    Du, X. W.
    Li, H.
    Lu, Y. W.
    Sun, J.
    JOURNAL OF CRYSTAL GROWTH, 2007, 305 (01) : 59 - 62
  • [49] Scanning tunneling microscopy investigation of the microtopography of SiO2 and Si surfaces at the Si/SiO2 interface in SIMOX structures
    Vyalykh, DV
    Fedoseenko, SI
    SEMICONDUCTORS, 1999, 33 (06) : 654 - 657
  • [50] Effect of Si/SiO2 interface on silicon and boron diffusion in thermally grown SiO2
    Fukatsu, S
    Itoh, KM
    Uematsu, M
    Kageshima, H
    Takahashi, Y
    Shiraish, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (11B): : 7837 - 7842
12345