A COMPARISON OF ACTIVE AND PASSIVE OPTICAL BISTABILITY IN SEMICONDUCTORS

被引：99
作者：
ADAMS, MJ
WESTLAKE, HJ
OMAHONY, MJ
HENNING, ID
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 09期
关键词：
D O I：
10.1109/JQE.1985.1072818
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1498 / 1504
页数：7
相关论文
共 25 条
[1]  
Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012
[2]   OPTICAL BISTABILITY IN COUPLED-CAVITY SEMICONDUCTOR-LASERS [J].
AGRAWAL, GP ;
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (03) :664-669
[3]   DYNAMICS OF INJECTION LASERS [J].
BASOV, NG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (11) :855-+
[4]  
GIBBS HM, 1982, APPL PHYS LETT, V41, P221, DOI 10.1063/1.93490
[5]   OPTICAL BISTABILITY IN SEMICONDUCTORS [J].
GIBBS, HM ;
MCCALL, SL ;
VENKATESAN, TNC ;
GOSSARD, AC ;
PASSNER, A ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1979, 35 (06) :451-453
[6]   BISTABILITY AND PULSATIONS IN CW SEMICONDUCTOR-LASERS WITH A CONTROLLED AMOUNT OF SATURABLE ABSORPTION [J].
HARDER, C ;
LAU, KY ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :382-384
[7]   BISTABLE OPERATION IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS EXCITATION [J].
KAWAGUCHI, H ;
IWANE, G .
ELECTRONICS LETTERS, 1981, 17 (04) :167-168
[8]   OPTICAL INPUT AND OUTPUT CHARACTERISTICS FOR BISTABLE SEMICONDUCTOR-LASERS [J].
KAWAGUCHI, H .
APPLIED PHYSICS LETTERS, 1982, 41 (08) :702-704
[9]   TUNING CHARACTERISTICS OF OPTICAL AMPLIFICATION IN 1.5-MU-M INGAASP-INP LASERS [J].
KUWAHARA, H ;
CHIKAMA, T ;
NAKAGAMI, T .
ELECTRONICS LETTERS, 1983, 19 (08) :295-297
[10]   ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J].
LASHER, GJ .
SOLID-STATE ELECTRONICS, 1964, 7 (10) :707-716
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