LOW RESISTIVITY INDIUM TIN OXIDE TRANSPARENT CONDUCTIVE FILMS .2. EFFECT OF SPUTTERING VOLTAGE ON ELECTRICAL PROPERTY OF FILMS

被引：274

作者：

ISHIBASHI, S

HIGUCHI, Y

OTA, Y

NAKAMURA, K

机构：

[1] Institute for Super Materials, ULVACJAPAN. Ltd, Sanbu, Chiba, 289-12

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576890

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A low resistivity and high transmittance Sn doped In2O3 (ITO) film was formed on a glass substrate by dc magnetron sputtering and lower sputtering voltage gave a lower resistivity film. At a sputtering voltage of — 250 V, the resistivity obtained was 5.0x10−4Ω cm for room temperature substrate, 2.0x10 −4Ωcm for 160°C substrate, 1.9X10−4Ω cm for 200°C substrate, and 1.2 × 10 −4Ω cm for 460 °C substrate. At a sputtering voltage of —80 V, the resistivity was 1.3 × 10−4Ω cm for 200 °C substrate. A measurement of Hall effect shows that the decreased resistivity by lower sputtering voltage is not caused by the Hall mobility but by an increased carrier concentration. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1403 / 1406

页数：4

共 4 条

[1] EFFECT OF O2 PRESSURE DURING DEPOSITION ON PROPERTIES OF RF-SPUTTERED SN-DOPED IN2O3 FILMS [J].