ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)

被引：46

作者：

CHIN, KK

PAN, SH

MO, D

MAHOWALD, P

NEWMAN, N

LINDAU, I

SPICER, WE

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.32.918

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：918 / 923

页数：6

共 30 条

[21] METALLIC AND ATOMIC APPROXIMATIONS AT THE SCHOTTKY-BARRIER INTERFACES [J].

SPICER, WE ;

PAN, S ;

MO, D ;

NEWMAN, N ;

MAHOWALD, P ;

KENDELEWICZ, T ;

EGLASH, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :476-480

[22] UNIFIED DEFECT MODEL AND BEYOND [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027

[23]

Sze S.M., 1981, PHYS SEMICONDUCTOR D, V2nd, P250

[24] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :419-422

[25] NUCLEATION AND GROWTH OF THIN-FILMS [J].

VENABLES, JA ;

SPILLER, GDT ;

HANBUCKEN, M .

REPORTS ON PROGRESS IN PHYSICS, 1984, 47 (04) :399-459

[26]

VENABLES JA, 1980, SURF SCI, V95, P441

[27]

WEAST RC, 1982, CRC HDB CHEM PHYS, pF185

[28]

ZIOCK K, COMMUNICATION

[29] AL ON GAAS(110) INTERFACE - POSSIBILITY OF ADATOM CLUSTER FORMATION [J].

ZUNGER, A .

PHYSICAL REVIEW B, 1981, 24 (08) :4372-4391

[30] THE EFFECT OF DOPING ON FERMI LEVEL POSITION AT A SEMICONDUCTOR-METAL INTERFACE [J].

ZUR, A ;

MCGILL, TC ;

SMITH, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :608-609

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