ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)

被引：46
作者：
CHIN, KK
PAN, SH
MO, D
MAHOWALD, P
NEWMAN, N
LINDAU, I
SPICER, WE
机构：
来源：
PHYSICAL REVIEW B | 1985年 / 32卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.32.918
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：918 / 923
页数：6
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