DISLOCATION ELIMINATION IN THM GROWTH OF GAAS

被引：13
作者：
YIP, VFS
WILCOX, WR
机构：
[1] UNION CARBIDE CORP,DEPT CRYSTAL PROD,SAN DIEGO,CA 92112
[2] CLARKSON COLL TECHNOL,DEPT CHEM ENGN,POTSDAM,NY 13676
来源：
JOURNAL OF CRYSTAL GROWTH | 1976年 / 36卷 / 01期
关键词：
D O I：
10.1016/0022-0248(76)90210-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：29 / 35
页数：7
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