GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6-MU-M

被引：33

作者：

ALAVI, K

PEARSALL, TP

FORREST, SR

CHO, AY

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1049/el:19830157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：227 / 229

页数：3

共 11 条

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ALAVI, K ;

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GROVES, SH .

PHYSICAL REVIEW B, 1980, 21 (03) :1311-1315

[2] SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM GA0.47IN0.53AS WITH A ROTATING SAMPLE HOLDER [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :607-609

[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNIFORM IN0.53GA0.47AS ON INP WITH A COAXIAL IN-GA OVEN [J].

CHENG, KY ;

CHO, AY ;

WAGNER, WR ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1015-1021

[5] GROWTH OF EXTREMELY UNIFORM LAYERS BY ROTATING SUBSTRATE HOLDER WITH MOLECULAR-BEAM EPITAXY FOR APPLICATIONS TO ELECTRO-OPTIC AND MICROWAVE DEVICES [J].

CHO, AY ;

CHENG, KY .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :360-362

[6]

DINGLE R, 1976, Patent No. 3982207

[7] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

KIM, OK ;

FORREST, SR ;

BONNER, WA ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1981, 39 (05) :402-404

[8]

NICHOLAS RJ, 1979, APPL PHYS LETT, V34, P491

[9] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

OLEGO, D ;

CHANG, TY ;

SILBERG, E ;

CARIDI, EA ;

PINCZUK, A .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :476-478

[10]

SCHIFF LI, 1968, QUANTUM MECHANICS, P37

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