ANALYSIS OF NOISE MARGIN AND SPEED OF GAAS-MESFET DCFL USING UM-SPICE

被引：5

作者：

HYUN, CH ^{[1
]}

SHUR, MS ^{[1
]}

PECZALSKI, A ^{[1
]}

机构：

[1] HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1421 / 1426

页数：6

共 13 条

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[9] DESIGN ANALYSIS OF GAAS DIRECT-COUPLED FIELD-EFFECT TRANSISTOR LOGIC [J].

PECZALSKI, A ;

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[10] HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS [J].

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