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ANALYSIS OF NOISE MARGIN AND SPEED OF GAAS-MESFET DCFL USING UM-SPICE
被引:5
作者
:
HYUN, CH
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440
HYUN, CH
[
1
]
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440
SHUR, MS
[
1
]
PECZALSKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440
PECZALSKI, A
[
1
]
机构
:
[1]
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55440
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1986年
/ 33卷
/ 10期
关键词
:
D O I
:
10.1109/T-ED.1986.22689
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1421 / 1426
页数:6
相关论文
共 13 条
[1]
BAEK J, 1985, IEEE T ELECTRON DEV, V32, P2426
[2]
CHEN TH, 1985, IEEE T ELECTRON DEVI, V32
[3]
CHEN TH, 1985, IEEE T ELECTRON DEV, V12, P883
[4]
Hill C. F., 1968, MICROELECTRONICS, V1, P16
[5]
A SPICE MODELING TECHNIQUE FOR GAAS-MESFET ICS
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
HUANG, CI
THORBJORNSEN, AR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
THORBJORNSEN, AR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(05)
: 996
-
998
[6]
SIMULATION AND DESIGN ANALYSIS OF (ALGA)AS/GAAS MODFET INTEGRATED-CIRCUITS
HYUN, CH
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HYUN, CH
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
SHUR, MS
CIRILLO, NC
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
CIRILLO, NC
[J].
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
1986,
5
(02)
: 284
-
292
[7]
LOW FIELD MOBILITY IN GAAS ION-IMPLANTED FETS
LEE, K
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
LEE, K
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
SHUR, MS
LEE, K
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
LEE, K
VU, TT
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
VU, TT
ROBERTS, PCT
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
ROBERTS, PCT
HELIX, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
HELIX, MJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(03)
: 390
-
393
[8]
WORST-CASE STATIC NOISE MARGIN CRITERIA FOR LOGIC-CIRCUITS AND THEIR MATHEMATICAL EQUIVALENCE
LOHSTROH, J
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
LOHSTROH, J
SEEVINCK, E
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
SEEVINCK, E
DEGROOT, J
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
DEGROOT, J
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1983,
18
(06)
: 803
-
807
[9]
DESIGN ANALYSIS OF GAAS DIRECT-COUPLED FIELD-EFFECT TRANSISTOR LOGIC
PECZALSKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
PECZALSKI, A
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
SHUR, MS
HYUN, CH
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
HYUN, CH
LEE, KW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
LEE, KW
VU, TT
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
VU, TT
[J].
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
1986,
5
(02)
: 266
-
273
[10]
HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS
SADLER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
SADLER, RA
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
EASTMAN, LF
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(07)
: 215
-
217
←
1
2
→
共 13 条
[1]
BAEK J, 1985, IEEE T ELECTRON DEV, V32, P2426
[2]
CHEN TH, 1985, IEEE T ELECTRON DEVI, V32
[3]
CHEN TH, 1985, IEEE T ELECTRON DEV, V12, P883
[4]
Hill C. F., 1968, MICROELECTRONICS, V1, P16
[5]
A SPICE MODELING TECHNIQUE FOR GAAS-MESFET ICS
HUANG, CI
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
HUANG, CI
THORBJORNSEN, AR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
UNIV TOLEDO,DEPT ELECT ENGN,TOLEDO,OH 43606
THORBJORNSEN, AR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1985,
32
(05)
: 996
-
998
[6]
SIMULATION AND DESIGN ANALYSIS OF (ALGA)AS/GAAS MODFET INTEGRATED-CIRCUITS
HYUN, CH
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
HYUN, CH
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
SHUR, MS
CIRILLO, NC
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR PHYS SCI,BLOOMINGTON,MN 55420
CIRILLO, NC
[J].
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
1986,
5
(02)
: 284
-
292
[7]
LOW FIELD MOBILITY IN GAAS ION-IMPLANTED FETS
LEE, K
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
LEE, K
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
SHUR, MS
LEE, K
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
LEE, K
VU, TT
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
VU, TT
ROBERTS, PCT
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
ROBERTS, PCT
HELIX, MJ
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,CTR SYST & RES,MINNEAPOLIS,MN 55413
HELIX, MJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1984,
31
(03)
: 390
-
393
[8]
WORST-CASE STATIC NOISE MARGIN CRITERIA FOR LOGIC-CIRCUITS AND THEIR MATHEMATICAL EQUIVALENCE
LOHSTROH, J
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
LOHSTROH, J
SEEVINCK, E
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
SEEVINCK, E
DEGROOT, J
论文数:
0
引用数:
0
h-index:
0
机构:
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
CSIR,NATL ELECT ENGN RES INST,PRETORIA,SOUTH AFRICA
DEGROOT, J
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1983,
18
(06)
: 803
-
807
[9]
DESIGN ANALYSIS OF GAAS DIRECT-COUPLED FIELD-EFFECT TRANSISTOR LOGIC
PECZALSKI, A
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
PECZALSKI, A
SHUR, MS
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
SHUR, MS
HYUN, CH
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
HYUN, CH
LEE, KW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
LEE, KW
VU, TT
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC,SYST & RES CTR,MICROELECTR GRP,MINNEAPOLIS,MN 55440
VU, TT
[J].
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
1986,
5
(02)
: 266
-
273
[10]
HIGH-SPEED LOGIC AT 300-K WITH SELF-ALIGNED SUBMICROMETER-GATE GAAS-MESFETS
SADLER, RA
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
SADLER, RA
EASTMAN, LF
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
EASTMAN, LF
[J].
IEEE ELECTRON DEVICE LETTERS,
1983,
4
(07)
: 215
-
217
←
1
2
→