BORON DELTA-DOPING IN SI USING ATMOSPHERIC-PRESSURE CVD

被引：8

作者：

KIYOTA, Y ^{[1
]}

NAKAMURA, T ^{[1
]}

INADA, T ^{[1
]}

机构：

[1] HOSEI UNIV,COLL ENGN,TOKYO 142,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90248-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Boron delta-doping was carried out by atmospheric chemical vapor deposition. The process consists of removal of native oxide, boron adsorption at 500-degrees-C, cap-layer deposition, and solid phase epitaxy at 600-degrees-C. From SIMS results with various primary ion energies, it was found that the boron profile has a peak at the interface between the substrate and the epitaxial layer and its full width at half maximum was a few nanometer. By evaluating the crystalline quality of the cap layer, it was found that the amount of adsorbed boron atoms has to be less than a few monolayer to obtain a solid phase epitaxial layer.

引用

页码：400 / 404

页数：5

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