COMBINED DRY AND WET ETCHING TECHNIQUES TO FORM PLANAR (011) FACETS IN GAINASP-INP DOUBLE HETEROSTRUCTURES

被引：15
作者：
COLDREN, LA
FURUYA, K
MILLER, BI
RENTSCHLER, JA
机构：
来源：
ELECTRONICS LETTERS | 1982年 / 18卷 / 05期
关键词：
D O I：
10.1049/el:19820160
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：235 / 237
页数：3
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