INTIP - A PROPOSED INFRARED DETECTOR MATERIAL

被引：69

作者：

VANSCHILFGAARDE, M

CHEN, AB

KRISHNAMURTHY, S

SHER, A

机构：

[1] SRI International, Menlo Park

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期

关键词：

D O I：

10.1063/1.112567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In1-xTlxP is proposed as a promising material for infrared detectors. A number of key optical and structural properties are studied within local density-functional theory. In1-xTlxP at x=0.67 and In1-xTlxAs at x=0.15 are estimated to have a gap of 0.1 eV. Their binding energies are larger than that of InSb, and they are found to form stable zinc-blende alloys for all x. In1-xTl xP nearly lattice matches to InP, and offers the potential to integrate detector array and read-out circuit. © 1994 American Institute of Physics.

引用

页码：2714 / 2716

页数：3

共 11 条

[1] ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS ALXGA1-XAS,GAPXAS1-X, AND GAXIN1-XP [J].