THE ION-MATRIX SHEATH AROUND A ROUND HOLE

被引：13

作者：

SHERIDAN, TE

机构：

[1] Department of Physics, West Virginia University, Morgantown

来源：

PLASMA SOURCES SCIENCE & TECHNOLOGY | 1995年 / 4卷 / 04期

关键词：

D O I：

10.1088/0963-0252/4/4/003

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The problem of plasma source ion implantation for a deep, plasma-filled, cylindrical hole in a flat plate is considered. The structure of the ion-matrix sheath resulting from the application of a zero-rise-time, negative-voltage pulse to the target is computed. Solutions for the potential structure in and around the hole are presented. It is found that the sheath does not conform completely to the hole until the radius of the hole is larger than the ion-matrix overlap length. ion trajectories across the sheath are found to impact upon the side wails of the hole at glancing angles, a situation that is unfavourable to implantation.

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收藏

页码：527 / 533

页数：7

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