COLLECTIVE EXCITATIONS AND THEIR LINESHAPES FOR A MODULATION-DOPED GAAS/ALAS SUPERLATTICE

被引:7
作者
SHARMA, AC
SOOD, AK
机构
[1] INDIAN INST SCI,JAWAHAR LAL NEHRU CTR ADV SCI RES,BANGALORE 560012,KARNATAKA,INDIA
[2] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA
关键词
D O I
10.1088/0953-8984/6/8/013
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The density-density correlation function has been calculated for a modulation-doped GaAs/AlAs superlattice. The superlattice is modelled to be an infinite periodic sequence of layers which consists of two dissimilar layers, one of GaAs and the other of AlAs, per unit cell. The conduction electrons are assumed to be confined to GaAs layers. Our calculation shows that, although the electron gas is confined in the GaAs layers, the plasma oscillations can interact with the lattice vibrations of both GaAs and AlAs. The interaction between AlAs lattice vibrations and the plasmons significantly contributes to the light-scattering spectrum. It is therefore argued that the experimentally measured frequencies of the coupled plasmon-phonon modes and their lineshapes for a modulation-doped GaAs/AlAs superlattice cannot correctly be described by the previous theoretical calculations which have been performed for a layered electron gas embedded in a homogeneous dielectric background. For the special case of a homogeneous dielectric background, our results, however, agree with the previously reported calculations.
引用
收藏
页码:1553 / 1562
页数:10
相关论文
共 50 条
[41]   Propagation and localization of vertically polarized plasmon-LO phonon collective excitations in doped GaAs/AlAs superlattices [J].
Pusep, YA ;
Silva, MTO ;
Moshegov, NT ;
Basmaji, P ;
Galzerani, JC .
ADVANCED LUMINESCENT MATERIALS AND QUANTUM CONFINEMENT, 1999, 99 (22) :105-117
[42]   STUDY OF INTERDIFFUSION IN A TE-DOPED ALAS-GAAS SUPERLATTICE [J].
MEI, P ;
SCHWARZ, SA ;
VENKATESAN, T ;
SCHWARTZ, CL ;
COLAS, E .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :2165-2167
[43]   ELECTRON-DISTRIBUTION IN MODULATION-DOPED ALGAAS/GAAS SINGLE QUANTUM-WELLS AND INVERTED MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES [J].
SUZUKI, K ;
SAITO, K ;
SAKU, T ;
SUGIMURA, A ;
HORIKOSHI, Y ;
YAMADA, S .
JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1266-1269
[44]   High-mobility electrons in modulation-doped AlAs quantum wells [J].
De Poortere, EP ;
Shkolnikov, YP ;
Shayegan, M .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) :646-648
[45]   INTER-MINIBAND OPTICAL-ABSORPTION IN A MODULATION-DOPED ALXGA1-XAS/GAAS SUPERLATTICE [J].
KIM, KT ;
LEE, SS ;
CHUANG, SL .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6617-6625
[46]   Spin polarization in modulation-doped GaAs quantum wires [J].
Evaldsson, M. ;
Ihnatsenka, S. ;
Zozoulenko, I. V. .
PHYSICAL REVIEW B, 2008, 77 (16)
[47]   PHOTOREFLECTANCE CHARACTERIZATION OF ALGAAS GAAS MODULATION-DOPED HETEROSTRUCTURES [J].
PAN, N ;
ZHENG, XL ;
HENDRIKS, H ;
CARTER, J .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2355-2360
[48]   INTERFACE STATES OF MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES [J].
CHUNG, SK ;
WU, Y ;
WANG, KL ;
SHENG, NH ;
LEE, CP ;
MILLER, DL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :149-153
[49]   SULFIDE PASSIVATION OF (ALGA)AS/GAAS MODULATION-DOPED HETEROSTRUCTURES [J].
WANG, J ;
CHENG, T ;
BETON, PH ;
HARRIS, JJ ;
BOWSER, E ;
FOXON, CT .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (12) :2101-2105
[50]   Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers [J].
A. A. Bykov ;
I. S. Strygin ;
A. V. Goran ;
D. V. Nomokonov ;
A. K. Bakarov .
JETP Letters, 2020, 112 :437-443