LEC GROWTH OF UNDOPED SI GAAS SINGLE-CRYSTALS FOR OPTOELECTRONIC APPLICATION

被引：3
|
作者：
OKADA, H [1 ]
KATSUMATA, T [1 ]
OBOKATA, T [1 ]
FUKUDA, T [1 ]
SUSAKI, W [1 ]
机构：
[1] MITSUBISHI ELECT CORP,INST LIFE SCI,RES & DEV LAB,4-1 MIZUHARA,ITAMI,HYOGO 664,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 02期
关键词：
D O I：
10.1016/0022-0248(86)90045-X
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：319 / 322
页数：4
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