AMORPHOUS-CRYSTALLINE SILICON ISOTYPE HETEROJUNCTION - ELECTROSTATIC POTENTIAL DISTRIBUTION AND C(V) CURVES

被引：8
|
作者：
RUBINELLI, F
ALBORNOZ, S
BUITRAGO, R
机构：
[1] Univ Nacional del Litoral, Consejo, Nacional de Investigaciones, Cientificas y Tecnicas, Santa Fe,, Univ Nacional del Litoral, Consejo Nacional de Investigaciones Cientificas y Tecnicas, Santa Fe, Ar
来源：
SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 08期
关键词：
CRYSTALS - Electron States - SEMICONDUCTING SILICON - Amorphous;
D O I：
10.1016/0038-1101(85)90059-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An amorphous-crystalline silicon isotype heterojunction is studied. The electrostatic potential profile, the built-in and interface potentials, space charge region widths and C-V curves were calculated using different doping levels. The effect of small changes in the electron affinity, band gap and density of states in the gap of a-Si:H were calculated. The effect of a localized charge at the interface was determined. The results were applied to a multijunction of the ppn or nnp type.
引用
收藏
页码：741 / 750
页数：10
相关论文
共 50 条
  • [1] DISTRIBUTION OF THE ELECTROSTATIC POTENTIAL BARRIER IN THE N-P, AMORPHOUS-CRYSTALLINE SILICON HETEROJUNCTION
    RUBINELLI, FA
    BATTIONI, MR
    BUITRAGO, RH
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) : 650 - 658
  • [2] C-V CURVES FOR AN AMORPHOUS CRYSTALLINE SILICON HETEROJUNCTION - CALCULATIONS AT THE STATIC LIMIT
    RUBINELLI, F
    ALBORNOZ, S
    BUITRAGO, R
    SOLID-STATE ELECTRONICS, 1989, 32 (07) : 547 - 554
  • [3] Indium Tin Oxide and the Amorphous-Crystalline Silicon Heterojunction
    Halliop, Basia
    Gougam, Adel
    Kherani, Nazir P.
    Zukotynski, Stefan
    PHOTONICS NORTH 2010, 2010, 7750
  • [4] AMORPHOUS-CRYSTALLINE HETEROJUNCTION TRANSISTORS
    PETERSEN, KE
    ADLER, D
    SHAW, MP
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 471 - 477
  • [5] AMORPHOUS-CRYSTALLINE SILICON HETEROJUNCTION - THEORETICAL EVALUATION OF THE CURRENT TERMS
    RUBINELLI, F
    ALBORNOZ, S
    BUITRAGO, R
    SOLID-STATE ELECTRONICS, 1989, 32 (10) : 813 - 825
  • [6] BACK AMORPHOUS-CRYSTALLINE SILICON HETEROJUNCTION (BACH) PHOTOVOLTAIC DEVICE
    Hertanto, Anthony
    Liu, Honggang
    Yeghikyan, Davit
    Rayaprol, B. Gangadhar
    Kherani, Nazir P.
    Zukotynski, Stefan
    2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 952 - 955
  • [7] ARSENIC TRISULFIDE IN ISOTYPE AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS
    TSIULYANU, DI
    ANDRIESH, AM
    KOLOMEYKO, EP
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (01): : 195 - 202
  • [8] Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell
    Chowdhury, Zahidur R.
    Kherani, Nazir P.
    APPLIED PHYSICS LETTERS, 2014, 105 (26)
  • [9] Effective interface pretreatment for amorphous-crystalline silicon heterojunction solar cells
    Zhang, Liping
    Liu, Wenzhu
    Chen, Renfang
    Liu, Jinning
    Meng, Fanying
    Liu, Zhengxin
    Toshima, Kouji
    Ota, Atsushi
    Yoshihara, Tadashi
    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 743 - 746
  • [10] AMORPHOUS-CRYSTALLINE SILICON JUNCTIONS
    JAYADEVAJAH, TS
    BUSMUNDR.O
    ELECTRONICS LETTERS, 1972, 8 (03) : 75 - +
12345