MISNAN - A PHYSICALLY BASED CONTINUOUS MOSFET MODEL FOR CAD APPLICATIONS

被引：60

作者：

BOOTHROYD, AR ^{[1
]}

TARASEWICZ, SW ^{[1
]}

SLABY, C ^{[1
]}

机构：

[1] NO TELECOM ELECT LTD,OTTAWA K2H 8V4,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1991年 / 10卷 / 12期

关键词：

D O I：

10.1109/43.103501

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes a circuit-level MOSFET model based on the representation of current transport in a sheet channel in terms of the surface potential conditions at the source and drain boundaries. It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFET's. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device. The model is used extensively at Northern Telecom and BNR with an in-house circuit simulator for digital and analog IC design.

引用

页码：1512 / 1529

页数：18

共 30 条

[1]

AGNEW D, 1980, TELESIS, V3, P3

[2] CHARGE-SHEET MODEL OF MOSFET [J].