P-I-N CDTE GAMMA-RAY DETECTORS BY LIQUID-PHASE EPITAXY (LPE)

被引：21

作者：

SHIN, SH ^{[1
]}

NIIZAWA, GT ^{[1
]}

PASKO, JG ^{[1
]}

BOSTRUP, GL ^{[1
]}

RYAN, FJ ^{[1
]}

KHOSHNEVISAN, M ^{[1
]}

WESTMARK, CI ^{[1
]}

FULLER, C ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

关键词：

D O I：

10.1109/TNS.1985.4336879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：487 / 491

页数：5

共 10 条

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[2] KEUCH TF, 1981, J ELECTROCHEM SOC, V128, P1142
[3] COMMON ANION HETEROJUNCTIONS - CDTE-CDHGTE
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[4] MOLL JL, 1964, PHYSICS SEMICONDUCTO, P230
[5] OLSEN HM, 1967, IEEE T ELECTRON DEV, V14
[6] HGCDTE PHOTO-DIODES FORMED BY DOUBLE-LAYER LIQUID-PHASE EPITAXIAL-GROWTH
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[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 402 - 404
[7] CURRENT POSSIBILITIES AND LIMITATIONS OF CADMIUM TELLURIDE DETECTORS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 150 (01): : 1 - 12
[8] SIFFERT P, 1983, MATER RES SOC S P, V16, P87
[9] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS
WANG, CC
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VANDERWYCK, AHB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 175 - 179
[10] CADMIUM TELLURIDE AND MERCURIC IODIDE GAMMA-RADIATION DETECTORS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1979, 162 (1-3): : 113 - 123