EPITAXIAL-GROWTH OF EUBA2CU3O7-Y FILMS ON YALO3 SINGLE-CRYSTALS

被引：33

作者：

ASANO, H ^{[1
]}

KUBO, S ^{[1
]}

MICHIKAMI, O ^{[1
]}

SATOH, M ^{[1
]}

KONAKA, T ^{[1
]}

机构：

[1] TRANSMISS SYST LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期

关键词：

Epitaxy; Euba[!sub]2[!/sub]Cu[!sub]3[!/sub]O[!sub]7-y[!/sub; Film; Sputtering; Superconductivity;

D O I：

10.1143/JJAP.29.L1452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of 1-2-3 superconductor films is reported on a new substrate material that possesses desirable dielectric properties. Magnetron-sputtered EuBa2Cu3O7-yfilms on YAlO3(001) show excellent properties with a Tcof 91 K. Films are epitaxially grown with the c-axis oriented normal to the surface, and the a- and b-axes ordered in the plane. The high-frequency (50 GHz) surface resistance of a film is 2 mΩ at 30 K. The dielectric constant of YAlO3is 16. The dielectric loss tangent at 10 GHz is as low as 7.3×10-5at 300 K and 2×10-6at 40 K. YAlO3-based films have considerable potential for high-frequency application. © 1990 IOP Publishing Ltd.

引用

页码：L1452 / L1454

页数：3

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