CHARACTERISTICS OF DEFECT FORMATION IN EPITAXIAL GALLIUM-ARSENIDE CONTAINING INDIUM ISOVALENT IMPURITIES

被引：0
作者：
KOLCHENKO, TI
LOMAKO, VM
RODIONOV, AV
SVESHNIKOV, YN
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 04期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：391 / 393
页数：3
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