CHARACTERISTICS OF DEFECT FORMATION IN EPITAXIAL GALLIUM-ARSENIDE CONTAINING INDIUM ISOVALENT IMPURITIES

被引：0
|
作者：
KOLCHENKO, TI
LOMAKO, VM
RODIONOV, AV
SVESHNIKOV, YN
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：391 / 393
页数：3
相关论文
共 50 条
  • [11] EPITAXIAL GALLIUM-ARSENIDE GROWTH
    不详
    ELECTRONIC ENGINEERING, 1979, 51 (627): : 10 - 10
  • [12] INFRARED CHARACTERIZATION OF AN EPITAXIAL FILM OF GALLIUM-ARSENIDE ON A GALLIUM-ARSENIDE SUBSTRATE
    PALIK, ED
    HOLM, RT
    GIBSON, JW
    THIN SOLID FILMS, 1977, 47 (02) : 167 - 175
  • [13] PROBLEM OF A CHANGE IN THE DEGREE OF COMPENSATION OF SHALLOW IMPURITIES AS A RESULT OF ISOVALENT DOPING OF GALLIUM-ARSENIDE
    BIRYULIN, YF
    GANINA, NV
    CHALDYSHEV, VV
    SHMARTSEV, YV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 677 - 679
  • [14] CHARACTERISTICS OF DEFECT FORMATION IN SILICON CONTAINING ISOVALENT TIN IMPURITIES.
    Solov'eva, E.V.
    Lazareva, G.V.
    Leiferov, B.M.
    Lototskii, A.G.
    Milvidskii, M.G.
    Rytova, N.S.
    Tvirova, E.A.
    1600, (18):
  • [15] RECOMBINATION OF CARRIERS IN GALLIUM-ARSENIDE CONTAINING DEFECT CLUSTERS
    LOMAKO, VM
    STAROSTIN, PY
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (01): : 55 - 58
  • [16] ELECTRICAL PROPERTIES OF EPITAXIAL GALLIUM ARSENIDE FILMS DOPED WITH ISOVALENT Sb AND In IMPURITIES.
    Solov'eva, E.V.
    Mil'vidskii, M.G.
    Ganina, N.V.
    1600, (16):
  • [17] MOBILITY DEGRADATION AND TRANSFERRED ELECTRON EFFECT IN GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE
    ARORA, VK
    MUI, DSL
    MORKOC, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (06) : 1231 - 1238
  • [18] EFFECT OF THE INTERFACE ON RADIATION DEFECT FORMATION IN GALLIUM-ARSENIDE
    BORKOVSKAYA, OY
    DMITRUK, NL
    KONAKOVA, RV
    LITOVCHENKO, VG
    TKHORIK, YA
    SHAKHOVTSOV, VI
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (3-4): : 249 - 252
  • [19] LUMINESCENCE OF TUNGSTEN IMPURITIES IN GALLIUM-ARSENIDE
    USHAKOV, VV
    GIPPIUS, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (08): : 881 - 884
  • [20] QUANTITATIVE MEASUREMENT OF IMPURITIES IN GALLIUM-ARSENIDE
    CLEGG, JB
    GRAINGER, F
    GALE, IG
    JOURNAL OF MATERIALS SCIENCE, 1980, 15 (03) : 747 - 750
12345